Short-Range Order in Group-IV Alloys: Insights from First-Principles and Large-Scale Atomistic Simulations Enabled by Machine-Learning Potentials
ORAL
Abstract
Group-IV semiconductor alloys are promising materials for next-generation electronics, photonics, and topological quantum technologies. A key challenge in realizing their potential lies in understanding their complex structural behavior, particularly short-range order (SRO), the subtle local atomic arrangements that can significantly influence electronic properties. Accurate modeling using density functional theory (DFT) is often limited by spatiotemporal constraints, creating a gap between theory and experiment. To bridge this gap, we develop machine-learning interatomic potentials based on a neuroevolution potential (NEP) approach trained on high-quality DFT datasets. These NEPs achieve near-DFT accuracy with the efficiency of empirical potentials, enabling large-scale atomistic simulations that can be directly compared with APT, 4D-STEM, and EXAFS measurements. Through theory-experiment synergy, we identify preferred atomic arrangements, confirming the presence of SRO, revealing its atomic-scale structure, and establishing atomic-order engineering as a powerful third degree of freedom for band-structure design, alongside composition and strain.
*This work was supported as part of the μ-ATOMS Energy Frontier Research Center, funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under award DE-SC0023412.
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Publication: Chen, Jin, Zhao, Li, Phys. Rev. Materials 8, 043805 (2024). Intricate short-range order in GeSn alloys revealed by atomistic simulations with highly accurate and efficient machine-learning potentials. https://doi.org/10.1103/PhysRevMaterials.8.043805
Vogl, Chen, et al., Science 389, 1342 (2025). Identification of short-range ordering motifs in semiconductors. https://doi.org/10.1126/science.adu0719
Presenters
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Shunda Chen
- George Washington University