Lead-Vacancy Centers in Diamond Solid Immersion Lens Fabricated on HPHT-Treated Substrates

ORAL

Abstract

Lead-vacancy (PbV) centers in diamond are emerging as a promising quantum emitter for the implementation of large-scale quantum networks. The PbV center is expected to exhibit high robustness against temperature among group-Ⅳ vacancy centers due to the large ground state splitting, and thus to show qubit operation without a dilution refrigerator [1]. However, the fluorescence enhancement using photonic structures remains a challenge for the high-quality PbV centers formed through high-pressure and high-temperature (HPHT) annealing. In this study, we demonstrate the fabrication of the diamond solid immersion lenses (SILs) incorporating PbV centers on rough HPHT-treated diamond substrates and the enhancement of the fluorescence intensity from the PbV centers. We employed focused ion beam to fabricate SILs with a diameter of ~1 um and a height of ~0.5 um. We confirmed the enhancement of the fluorescence intensity from PbV centers under non-resonant excitation. Furthermore, transform-limited linewidths were observed under resonant excitation. Our results will pave the way for further optical and spin measurements of the PbV centers.

 

[1] P. Wang et al., ACS Photonics 8, 2947 (2021).

*This work was supported by JSPS KAKENHI (Grants No. JP22H04962), the MEXT Quantum Leap Flagship Program (Grant No. JPMXS0118067395), and JST Moonshot R&D (Grant No. JPMJMS2062).

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Presenters

  • Koyo Hirai

    • Dapartment of Electrical and Electronic Engineering, School of Engineering, Institute of Science Tokyo
    • Institute of Science Tokyo

Authors

  • Koyo Hirai

    • Dapartment of Electrical and Electronic Engineering, School of Engineering, Institute of Science Tokyo
    • Institute of Science Tokyo

  • Yiyang Chen

    • Dapartment of Electrical and Electronic Engineering, School of Engineering, Institute of Science Tokyo
    • Institute of Science Tokyo
    • Department of Electrical and Electronic Engineering, School of Engineering, Institute of Science Tokyo

  • Toshiharu Makino

    • National Institute of Advanced Industrial Science and Technology

  • Takashi Taniguchi

    • National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • International Center for Materials Nanoarchitectonics, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
    • Research Center for Functional Materials, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan

  • Masashi Miyakawa

    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Science

  • Shinobu Onoda

    • Takasaki Advanced Radiation Research Institute, National Institute for Quantum Science and Technology
    • National Institutes for Quantum Science and Technology
    • Takasaki Advanced Radiation Research Institute, National Institutes for Quantum Science and Technology

  • Mutsuko Hatano

    • Dapartment of Electrical and Electronic Engineering, School of Engineering, Institute of Science Tokyo
    • Institute of Science Tokyo
    • Department of Electrical and Electronic Engineering, School of Engineering, Institute of Science Tokyo

  • Takayuki Iwasaki

    • Dapartment of Electrical and Electronic Engineering, School of Engineering, Institute of Science Tokyo
    • Institute of Science Tokyo
    • Department of Electrical and Electronic Engineering, School of Engineering, Institute of Science Tokyo