Exciton level structure in quantum spin Hall insulators

ORAL

Abstract

In many two-dimensional (2D) semiconductors that possess Berry curvature but are topologically trivial (i.e., no protected edge states and zero Chern number), including the commonly studied gapped graphene systems and transition metal dichalcogenides like 2H-MoS2, a modified hydrogenic-like picture is expected to hold for excitons. Berry curvature effects can split the degeneracy of opposite azimuthal angular momentum m and -m channels, yet the lowest-energy exciton remains the m=0 state with a s-like characteristic. Here, we show this expectation can fail in topologically non-trivial systems, where the electron-hole pair acquires an additional momentum-space phase winding n set by the Berry geometry of the valence and conduction bands. We confirm such behaviours with ab initio GW plus Bethe-Salpeter equation (GW-BSE) calculations on several representative 2D quantum spin Hall insulators.

*This work was supported by the National Science Foundation and by the U.S. Department of Energy.

Presenters

  • Fang Zhang

    • University of California, Berkeley

Authors

  • Fang Zhang

    • University of California, Berkeley
  • Gurjyot Singh Sethi

    • University of California, Berkeley
  • Steven G Louie

    • University of California, Berkeley
    • Department of Physics, University of California, Berkeley, CA, USA; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
    • Department of Physics, University of California at Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory