Synthesis of encapsulated semiconducting nanowires via van der Waals injection-molding 

Understanding electron behavior in low-dimensional systems underpins next-generation electronics. Traditional top-down approaches to producing nanostructures introduce disorder, whereas bottom-up routes can offer high material quality but provide limited control over geometry. Recently, our group developed a technique for growing single-crystal nanostructures of Bi, Sn, and In with predefined geometries defined by molds lined hexagonal-boron-nitride (hBN) [1]. I will discuss our efforts to extend this technique to semiconducting nanostructures, such as Te and Ge, which have higher melting points.