Atomic scale processing for fabrication of quantum devices
ORAL
Abstract
Quantum devices suffer from losses due to poor interface quality, non-uniform deposition, and etch induced surface damage.1 Employing advanced fabrication techniques to minimise (or avoid) these sources of loss could present a route towards higher quality films, enabling longer coherence times for quantum devices.
In this talk we will discuss the use of atomic layer etching (ALE) and atomic layer deposition (ALD) to minimise surface defects for a variety of different quantum relevant materials. The atomic-scale processing techniques ALE and ALD offer sub-nm thickness control, wafer-scale uniformity, and low damage processing. ALE of films for superconducting, colour centre and waveguide applications will be highlighted, demonstrating how ALE can accurately control etch depth, while also reducing surface damage.2,3 Examples of superconducting nitrides deposited by ALD for superconducting nanowire single photon detectors (SNSPDs) and superconducting through silicon vias will then be given.4,5 Utilising advanced etching and deposition techniques with atomic-scale precision may offer a route towards improved performance for next generation quantum devices.
In this talk we will discuss the use of atomic layer etching (ALE) and atomic layer deposition (ALD) to minimise surface defects for a variety of different quantum relevant materials. The atomic-scale processing techniques ALE and ALD offer sub-nm thickness control, wafer-scale uniformity, and low damage processing. ALE of films for superconducting, colour centre and waveguide applications will be highlighted, demonstrating how ALE can accurately control etch depth, while also reducing surface damage.2,3 Examples of superconducting nitrides deposited by ALD for superconducting nanowire single photon detectors (SNSPDs) and superconducting through silicon vias will then be given.4,5 Utilising advanced etching and deposition techniques with atomic-scale precision may offer a route towards improved performance for next generation quantum devices.
- 1. de Leon, N. P., et al (2021). Science, 372(6539).
2. Chen, I. I., et al. (2024). Journal of Vacuum Science & Technology A, 42(6).
3. Michaels, J. A., et al. (2023). Journal of Vacuum Science & Technology A, 41(3).
4. Ren, Z., et al. (2025). IEEE Electron Device Letters, 46(2), 175–178.
5. Peeters, S. A., et al. (2025). AVS Quantum Science, 7(2).
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Presenters
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Nicholas Chittock
- Oxford Instruments Plasma Technology