Properties of Electrochemically Deposited Indium Antimonide on Indium Thin Films

Indium antimonide (InSb) is a III-V narrow-bandgap semiconductor with broad applications in infrared detection, sensing, and energy conversion technologies. Relative to conventional InSb melt and vapor phase growth methods, the process implemented in this work has several advantages including low cost, a lack of extreme growth conditions, and facile scalability to large area film growth. In this study, InSb thin films were grown under various experimental conditions using a benchtop electrochemical growth methodology performed at room temperature. As–deposited films were characterized for their crystallographic and morphological properties to determine optimal deposition parameters.