Field effect transistors of thin film SiAs2

This project explores the semiconducting nature of SiAs2 to build metal-oxide-semiconductor field effect transistors (MOSFETs) and test their performance. Theory predicts that SiAs₂ FETs with 35 nm gate length are promising for future high-performance devices. However, experimental work on SiAs₂ remains limited. In this poster presentation, I will show our recent efforts in fabricating SiAs2-based MOSFET devices and measuring their electric responses. In our devices, thin flakes of SiAs2 is placed on top of SiO2/Si substrate and encapsulated with hBN flakes. Electrodes directly contact the SiAs2 and doped-Si acts as the back gate. We will show our results on the doping dependence of electric conductivity.