Simulating Anisotropic Plasma Etching in WSe2 Using MATLAB

Plasma etching is a cornerstone of nanoscale fabrication, yet tungsten diselenide (WSe2); a layered transition metal dichalcogenide (TMD) with promising optoelectronic applications; remains relatively underexplored compared to silicon and molybdenum disulfide (MoS2). This work presents a MATLAB based simulation framework for anisotropic plasma etching of WSe2, incorporating ion flux, incidence angle, and energy distributions derived from experimental sputtering data. The model predicts trench evolution in one, two, and three dimensions and qualitatively reproduces anisotropic etching behavior reported in the literature. Results demonstrate that ion incidence angle and energy significantly influence etch depth and profile,

while extended simulation time correlates with increased trench depth. The framework provides a scalable tool for parameter exploration and process optimization, bridging the gap between

experimental plasma etching studies and computational modeling of emerging 2D materials.