Fabrication and Structural Analysis of Trilayers for Tantalum Josephson Junctions with Ta₂O₅ Barriers

Tantalum (Ta) has recently emerged as a promising low-loss material, enabling record coherence times in superconducting qubits. This enhanced performance is largely attributed to its stable native oxide, which is believed to host fewer two-level system (TLS) defects -- key contributors to decoherence in superconducting circuits. Nevertheless, aluminum oxide (AlO_x) remains the predominant choice for Josephson junction barriers in most qubit architectures. In this study, we systematically investigate various techniques for forming high-quality oxide layers on α-phase tantalum (α-Ta) thin films, aiming to develop effective Josephson junction barriers. We explore thermal oxidation in a tube furnace, rapid thermal annealing, as well as plasma oxidation of both room-temperature and heated Ta films, and propose a mechanistic picture of the underlying oxidation mechanisms. All methods yield Ta₂O₅, the same compound as tantalum’s native oxide. Among these, plasma oxidation produces the smoothest and highest-quality oxide layers, making it particularly well-suited for Josephson junction fabrication. Furthermore, we demonstrate the successful epitaxial growth of α-Ta atop oxidized α-Ta films, paving the way for the realization of trilayer Ta/Ta-O/Ta Josephson junctions with clean, low-loss interfaces.