Tuneable Optoelectronic Response In Flexible PtSe<sub>2</sub> Films

ORAL

Abstract

Noble metal dichalcogenides such as platinum diselenide (PtSe2) belong to the material class of layered 2D materials. Some of these materials exhibit a transition from a direct bandgap semiconductor to a semi-metal as the layer thickness increases and have been shown to possess type-II Dirac semi-metallic behavior along with topological surface states [1]. Furthermore, the occurrence of polarization sensitive optoelectronic response indicates an inherent symmetry breaking in this material, which nominally crystallizes in the isotropic hexagonal 1T phase [2]. This study investigates PtSe2 polycrystalline films on a platform that enables to apply controlled strain. Specifically, the low temperature thermally assisted conversion (TAC) of platinum allows to grow the films directly on flexible substrates. Polarization dependent measurements reveal characteristics of a second-order nonlinear response that can be tuned under mechanical deformation. This work provides insights into the origin of anisotropic optoelectronic response in PtSe2 and introduces a control parameter for actively modulating its response to polarized light, with potential applications in flexible optoelectronics.

[1] Y. Wang et al., Nano Lett. 15, 4013 (2015).

[2] M.Hemmat et al., arXiv:2304.02070 (2023).

*This project was funded by dtec.bw - Digitalization and Technology Research Center of the Bundeswehr for support (project VITAL-SENSE). dtec.bw is funded via the German Recovery and Resilience Plan by the European Union (NextGenerationEU). This Research was sponsored by the Army Research Office and was accomplished under Cooperative Agreement Number W911NF2520010 (STEP-TWO).

Presenters

  • Martin Gerlei

    • Institute of Physics, University of the Bundeswehr Munich and Research Center Integrated Sensor Systems (SENS)

Authors

  • Martin Gerlei

    • Institute of Physics, University of the Bundeswehr Munich and Research Center Integrated Sensor Systems (SENS)
  • George J de Coster

    • Army Research Laboratory
  • Stefan Heiserer

    • Institute of Physics, University of the Bundeswehr Munich and Research Center Integrated Sensor Systems (SENS)
  • János Papp

    • Institute of Physics, University of the Bundeswehr Munich and Research Center Integrated Sensor Systems (SENS)
  • Simon Schlosser

    • Institute of Physics, University of the Bundeswehr Munich and Research Center Integrated Sensor Systems (SENS)
  • Georg S Duesberg

    • Institute of Physics, University of the Bundeswehr Munich and Research Center Integrated Sensor Systems (SENS)
  • Paul Seifert

    • Institute of Physics, University of the Bundeswehr Munich and Research Center Integrated Sensor Systems (SENS)