Morphology control and low-temperature magnetotransport in chiral 2D perovskite R-(MBA)₂PbI₄

Two-dimensional chiral hybrid perovskites, such as R-(MBA)₂PbI₄, are promising platforms for understanding the impact of chirality on charge and spin transport. However, their intrinsic in-plane transport properties remain largely unexplored due to their high resistance in thin-film form. In this work, we have developed a fabrication strategy to produce uniform, oriented, reduced resistance films suitable for lateral device integration. The films were then integrated into three-terminal devices, and resistance measurements were performed with respect to gate voltage, temperature, and applied magnetic field. Lateral Hall-bar devices were also fabricated, and Hall measurements were performed at room temperature in the dark. Hall mobility and carrier concentration were calculated. This work establishes key in-plane magneto-transport characteristics of R-(MBA)₂PbI₄ and lays the groundwork for future asymmetric device architectures aimed at uncovering the fundamentals of chirality-induced spin selectivity. Ongoing efforts focus on temperature-dependent Hall measurements to gain deeper insight into the charge transport mechanisms and their evolution with temperature.