Van-der-Waals assembly of hybrid devices from one-dimensional carbon nanotubes and two-dimensional hBN dielectrics

Encapsulating one-dimensional conductors within two-dimensional dielectrics offers a promising route to achieving ultraclean quantum devices. Following fabrication approaches outlined by Nichols (2024) and Huang et al. (2015), we are developing procedures to build encapsulated carbon-nanotube field-effect transistors in our laboratory. The process combines van-der-Waals assembly using polymer-assisted transfer of exfoliated hexagonal boron nitride (hBN) flakes and a carbon nanotube, followed by reactive-ion etching to expose contact regions while preserving clean interfaces. Characterization will include AFM and optical imaging to verify interfacial cleanliness and layer alignment, along with electrical measurements to evaluate hysteresis and noise characteristics, contact quality, and current-carrying performance. This work aims to establish a robust fabrication approach for integrating ultra-clean one-dimensional conductors into hybrid quantum devices.

Charge pumping in hBN-encapsulated graphene driven by surface acoustic waves

D. Nichols, J. Berg, T. Taniguchi, K. Watanabe, P. Dhagat, V. V. Deshpande, Albrecht Jander, E. D. Minot,

J. Appl. Phys. 136, 024302 (2024),

Superior current carrying capacity of boron nitride encapsulated carbon nanotubes with zero-dimensional contacts

Huang et al.

Nano Letters, 15(10), pp. 6836–6840. doi:10.1021/acs.nanolett.5b02716.