Electronic transport in dual-gated few-layer CrSBr transistors

We report the fabrication and electrical characterization of dual-gated transistors of few-layer van der Waals antiferromagnetic semiconductor CrSBr. By performing low temperature electronic transport measurements and applying an external magnetic field, we detail how the electrical resistance depends on the orientation of the spin sublattices of individual layers. We also show that the magnetoresistance can be tuned with gate voltages that modulate both the carrier density and out of plane electric field. Our results shed light on the interplay between electronic conduction and magnetic order in an electrically tunable antiferromagnetic semiconductor.