Spin flip/flop and magnetic topological states in multilayer V-doped WSe₂

Unsaturated giant linear magnetoresistance is an interesting physical characteristic in condensed matter physics. This appears in exotic materials such as defective semiconductors, topological insulators, nodal line semimetals, and superconductivity. In this talk, we report the coherent appearance of unsaturated giant linear magnetoresistance with magnetic hysteresis, which has not been observed before, in lightly V-doped WSe₂ (0.5 %V) via a vertical device of graphene electrodes. The hysteresis linear characteristic exists up to 400 K without any deterioration, with 500 % of magnetoresistance. Notably, all these characteristics can be controlled by the electrical bias applied across the electrodes via the spin-transfer torque mechanism, which can be reversibly switched to hysteresis parabolic magnetoresistance. These properties can be explained by the spin flip-flop among strong ferromagnetic layers of V-doped WSe₂. These findings provide new insights into the relationship between magnetic properties and electronic transport in 2D diluted ferromagnetic semiconductors and highlight their potential for practical applications in magnetic sensing, data storage, and topological devices.