Boron-Vacancy/Carbon Defect in the Two-Dimensional Hexagonal Boron Nitride as a spin qubit
ORAL
Abstract
Using existing knowledge and an educated guess we select a neutral defect in the hexagonal boron nitride (hBN), which consists of a boron vacancy combined with a carbon dopant substituting another boron atom (VBCB), as a possible optically controllable spin qubit. Our calculations confirmed that VBCB has triplet ground state and singlet local energy minimum. Both states are dynamically stable according to our phonon calculations. Next, we applied the advanced linear response GW and Bethe-Salpeter equation methods to calculate the electronic structure and optical excitations in the triplet and singlet states. Using our calculation results, we constructed the spin-polarization cycle diagram for the VBCB defect and found it to be a promising spin qubit.
*This work was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Award # DE-SC0024487.
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Publication: "Spin Qubit Properties of the Boron-Vacancy/Carbon Defect in the Two-Dimensional Hexagonal Boron Nitride". J. Phys.: Condens. Matter 37 385503 (2025).
Presenters
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Marisol Alcantara Ortigoza
- Tuskegee University