Spin relaxation mechanism in Si single and double quantum dots

Next-generation non-charged-based logic devices can play an important role in trapping and controlling the behaviors of single electron spins in silicon single and double quantum dots. In this presentation, based on the Finite Element method, we present numerical simulations of such spins controlled with electric and magnetic fields. I demonstrate that spin relaxations due to dilatation and shear deformation potentials are very sensitive to externally applied in-plane and out-of-plane magnetic fields (B < 1T). At large magnetic fields (B>2T), several spin relaxation rates converge into one with magnetic fields due to the presence of a spin hot spot. In double quantum dots, we also investigate the spin relaxation due to the tunneling of charge carriers in the quantum dots. The results of the calculation suggest it is possible to tune double quantum dots into single quantum dots with increasing in-plane and out-of-plane magnetic fields.