Electrically Driven Single-Photon Emission from Silicon Color Centers for Spin Qubit Readout

We demonstrate electroluminescence from W and G type silicon color centers embedded in the intrinsic region of lateral p-i-n junctions. By systematically varying device geometry, we identified optimal design parameters that maximize electro-optic efficiency, defined as the ratio of emitted optical power to electrical power input. These results establish a viable platform for electrically driven single-photon emission in silicon. Ongoing efforts focus on characterizing single-photon emission statistics and integrating the emitters with photonic waveguides for coupling to quantum dots, enabling spin-to-charge conversion for spin qubit readout. This hybrid approach combines the scalability of silicon photonics with the quantum coherence of color centers, offering a promising path toward electrically addressable spin-photon interfaces. This talk will present progress on single-photon detection and highlight advancements toward on-chip quantum information processing using silicon-based technologies.