Substrate engineering of monolayer MoS₂ field effect transistor devices

In recent years 2D monolayer MoS₂ has emerged as one of the well-studied compounds from the class of two-dimensional (2D) transition-metal dichalcogenides (TMDs) that holds the promise to revolutionize electronic and optoelectronic technology. Nonetheless, mobility engineering in monolayers of MoS₂ remains one of the most important challenges that determine the electronic/optoelectronic performances of the final functional devices. In this regard, substrate engineering offers a unique and facile approach to modify the stability and electronic structure of monolayer MoS₂ to further achieve higher mobilities and photo responses. In this work, we will present integration of monolayer MoS₂ on sputter deposited hafnium zirconium oxide substrates and highlight the improvement of functional device performances by analyzing several low temperature electronic transport properties.