Dynamic Screening Effects on Auger Recombination in Metal-Halide Perovskites
ORAL
Abstract
Auger recombination is the dominant nonradiative loss limiting perovskite LEDs and nanolasers at device-relevant carrier densities (>10¹⁷ cm⁻³).[1,2] Conventional first-principles treatments[3] employ static dielectric screening W(q,0), neglecting frequency dispersion of electronic polarization in polar iodide perovskites, leading to significant errors.
I will present a framework incorporating the frequency-dependent screened Coulomb interaction W₀₀(q,ω), computed from low-scaling GW, into direct and phonon-assisted Auger amplitudes.[4] Applying this to orthorhombic γ-CsPbI₃ (Eg ≈ 1.73 eV) and γ-CsSnI₃ (Eg ≈ 1.30 eV), I will show that dynamic screening enhances the dielectric response at optical energies, reducing the room-temperature Auger coefficient by 50–60% relative to the static approximation.[5] This shifts the critical crossover density between radiative and nonradiative recombination by nearly a factor of two, with direct implications for efficiency roll-off and lasing thresholds.
My results establish dynamic dielectric screening as a quantitative determinant of Auger losses in polar semiconductors and provide a transferable framework for predictive device modeling.
[1] J. Qin et al., Trends Chem. 3, 34 (2021).
[2] Y. Sun et al., Appl. Phys. Rev. 11, 041418 (2024).
[3] E. Kioupakis et al., Phys. Rev. B 92, 035207 (2015).
[4] F. Yuan et al., Nat. Photonics 18, 170 (2024).
[5] U. Singh & S. I. Simak, In Manuscript (2025).
I will present a framework incorporating the frequency-dependent screened Coulomb interaction W₀₀(q,ω), computed from low-scaling GW, into direct and phonon-assisted Auger amplitudes.[4] Applying this to orthorhombic γ-CsPbI₃ (Eg ≈ 1.73 eV) and γ-CsSnI₃ (Eg ≈ 1.30 eV), I will show that dynamic screening enhances the dielectric response at optical energies, reducing the room-temperature Auger coefficient by 50–60% relative to the static approximation.[5] This shifts the critical crossover density between radiative and nonradiative recombination by nearly a factor of two, with direct implications for efficiency roll-off and lasing thresholds.
My results establish dynamic dielectric screening as a quantitative determinant of Auger losses in polar semiconductors and provide a transferable framework for predictive device modeling.
[1] J. Qin et al., Trends Chem. 3, 34 (2021).
[2] Y. Sun et al., Appl. Phys. Rev. 11, 041418 (2024).
[3] E. Kioupakis et al., Phys. Rev. B 92, 035207 (2015).
[4] F. Yuan et al., Nat. Photonics 18, 170 (2024).
[5] U. Singh & S. I. Simak, In Manuscript (2025).
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Publication: U. Singh & S. I. Simak, Dynamic Screening Effects on Auger Recombination in Metal-Halide Perovskites, In Manuscript (2025).
Presenters
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Utkarsh Singh
- Linköping University