Gate-Tunable Superconducting Transport and Diode Effect in KTaO₃ (110)

We investigate superconducting I-V characteristics in (110)-oriented AlO_x/KTaO₃ interfacial two-dimensional electron gases (2DEGs), focusing on the interplay between the critical current and applied magnetic fields (B) and gate voltages (V_G) at cryogenic temperatures. We discuss how the critical switching current (I_c) varies with B and  V_G, and how a diode-like response emerges under certain conditions, including near zero field. In particular, we find that in-plane magnetic fields produce a non-monotonic variation of I_c with reproducible maxima and minima at low fields, accompanied by a diode-like response.  Electrostatic gating provides an additional tuning parameter, enabling modulation of both the magnitude and field dependence of the critical current and diode effect. Taken together, these results suggest a complex superconducting landscape in KTaO₃ (110) 2DEGs, where interfacial effects, spin-orbit coupling (SOC), and possible magnetic contributions from the oxide interface play a central role. We discuss possible origins of our observations, including magnetic impurities,  weak-link or Josephson network dynamics with local variations in superconducting phase coherence, field-tuned spin-orbit coupling,  and possibly even unconventional pairing states. The combination of strong SOC, interfacial symmetries and the central role of defects in these oxide systems provides a unique setting for exploring emergent nonreciprocal superconducting transport.