Direct evidence of energy dependent Charge Density Wave State in Cu<sub>2-x</sub>Te using Scanning Tunneling Microscopy/ Spectroscopy
ORAL
Abstract
Charge density wave (CDW) has been a subject of great interest in low-dimensional materials for decades. It refers to spontaneous periodic variation in electronic charge density, that often is accompanied by a corresponding distortion in the crystal lattice [1]. Layered transition metal chalcogenides have emerged as a prominent candidate for exploring correlated electronic phases, due to their diverse electronic properties and structural versatility. Cu2-xTe is one of such materials, having hexagonal Nowotny phase with lowest ground state energy [2]. Previous studies on Cu2-xTe provide no concrete evidence of CDW signatures and the reconstructions on the crystal surface were concluded as the consequences of the movement of liquid like copper atoms [3].
Here we report the results of comprehensive bias dependent CDW patterns of well characterized Cu2-xTe single crystals which were grown by flux method [3] using Scanning Tunneling Microscopy/Spectroscopy (STM/S). Electric transport measurement confirms that the material shows a metal to semiconductor transition at (Tcdw) ≈ 150 K. STM/S measurements were carried out using a commercial STM (make: Unisoku, Japan) for crystals which were cleaved at room temperature and under UHV conditions. Atomically flat terraces of height ≈ 0.8 nm are observed, hexagonal atomic arrangement is observed on the sample surface. The atomic resolution topographic images at T ≈ 77 K show direct evidence of 2x2 commensurate superstructures. Fourier transform of the topographic images provide clear evidence for the superstructures. A series of other different reconstructions (3x3, √3x√3 etc.) are also observed. The interatomic distance on the surface is found to be ≈ 0.39 nm. The local STS measurements carried out on the surface reveal a gap-like feature which sustains upto Tcdw. Above Tcdw the DOS around fermi energy significantly filled up, ensuring the closure of the gap. In conclusion, we can say that our STS results on differently reconstructed surfaces at T<Tcdw may provide important insights for electronic states of Cu2-xTe close to the Fermi level.
References:
1M. D. Johannes and I. I. Mazin, Phys. Rev. B 77, 165135 (2008).
2W. Gao et al., Chin. Phys. Lett. 40, 017101 (2023).
3S. Liu et al., Phys. Rev. B 103, 115127 (2021).
Here we report the results of comprehensive bias dependent CDW patterns of well characterized Cu2-xTe single crystals which were grown by flux method [3] using Scanning Tunneling Microscopy/Spectroscopy (STM/S). Electric transport measurement confirms that the material shows a metal to semiconductor transition at (Tcdw) ≈ 150 K. STM/S measurements were carried out using a commercial STM (make: Unisoku, Japan) for crystals which were cleaved at room temperature and under UHV conditions. Atomically flat terraces of height ≈ 0.8 nm are observed, hexagonal atomic arrangement is observed on the sample surface. The atomic resolution topographic images at T ≈ 77 K show direct evidence of 2x2 commensurate superstructures. Fourier transform of the topographic images provide clear evidence for the superstructures. A series of other different reconstructions (3x3, √3x√3 etc.) are also observed. The interatomic distance on the surface is found to be ≈ 0.39 nm. The local STS measurements carried out on the surface reveal a gap-like feature which sustains upto Tcdw. Above Tcdw the DOS around fermi energy significantly filled up, ensuring the closure of the gap. In conclusion, we can say that our STS results on differently reconstructed surfaces at T<Tcdw may provide important insights for electronic states of Cu2-xTe close to the Fermi level.
References:
1M. D. Johannes and I. I. Mazin, Phys. Rev. B 77, 165135 (2008).
2W. Gao et al., Chin. Phys. Lett. 40, 017101 (2023).
3S. Liu et al., Phys. Rev. B 103, 115127 (2021).
*Fuding agency : Ministry of Education, Government of India.
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Presenters
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Subhrajyoti Koley
- Indian Institute of Technology Delhi