Tunable Chern Insulators in Moiré-Distant and Moiré-Proximal Rhombohedral Multilayer Graphene
ORAL
Abstract
In this talk, we report on the electrical transport properties of rhombohedral multilayer graphene/hexagonal boron nitride (RMG/hBN) moiré superlattices. By fabricating a controlled pair of devices with opposite hBN alignment orientations, we find that the integer and fractional quantum anomalous Hall effects (IQAHE and FQAHE) in the moiré-distant region are unaffected by the alignment orientation. In contrast, the moiré-proximal region exhibits a pronounced dependence on the hBN orientation: only one alignment configuration shows an anomalous Hall effect near ν = 1, which evolves into topological Chern insulators under a small magnetic field. Moreover, the Chern number can be tuned by both magnetic and displacement electric fields. These results provide important insights into understanding the FQAHE in the moiré-distant region.
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Presenters
Chushan Li
School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
Authors
Chushan Li
School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
Chuanqi Zheng
Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai, China
Zheng Sun
Shanghai Jiao Tong Univ
School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
Shanghai Jiao Tong Univesity
kai liu
Shanghai Jiao Tong Univ
School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
Lei Qiao
Kavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences, Beijing, China
Yifan wei
School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
Chenyu Zhang
Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai, China
Takashi Taniguchi
National Institute for Materials Science
Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
International Center for Materials Nanoarchitectonics, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
Research Center for Functional Materials, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
Takashi Taniguchi
National Institute for Materials Science
Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
International Center for Materials Nanoarchitectonics, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
Research Center for Functional Materials, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
Bingbing Tong
Institute of Physics, Chinese Academy of Sciences
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
Chinese Academy of Sciences
Li Lu
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
Jinfeng Jia
School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
Shanghai Jiao Tong Univ
Zhiwen Shi
Shanghai Jiao Tong University
School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
Jianpeng Liu
School of Physical Science and Technology, ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai ,China
ShanghaiTech University
Guorui Chen
Shanghai Jiao Tong Univ
School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
Tingxin Li
Shanghai Jiao Tong Univ
School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
Shanghai Jiao Tong Univesity
Xiaoxue Liu
Shanghai Jiao Tong Univ
Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai,China