Exploring STEM-in-SEM as a High-Throughput Alternative to TEM for Nanoscale Materials Characterization

Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) are widely used to image and analyze materials at nanometer resolutions, offering complementary insights into internal structure and surface morphology. Scanning transmission electron microscopy-in-SEM (STEM-in-SEM) integrates transmitted electron imaging into SEM platforms, enabling nanoscale characterization with enhanced throughput and versatility. STEM-in-SEM operates at lower accelerating voltages (≤30 keV), improving contrast for low-Z elements, and supporting multiple imaging modes (bright field, annular dark field, high-angle annular dark field), as well as energy-dispersive X-ray spectroscopy for compositional analysis. While its spatial resolution (~2 nm) is lower than that of TEM (~0.2 nm), STEM-in-SEM offers practical advantages including automated alignment, multi-sample loading, and compatibility with correlative techniques. This study evaluates the analytical performance and limitations of STEM-in-SEM relative to TEM using representative polymeric and hybrid materials. The findings aim to inform instrument selection strategies and expand the toolkit for high-resolution, high-throughput materials characterization in materials and industrial research.