Superconducting Flux Memory – Flux Lock Device

ORAL

Abstract

Ever since the invention of Josephson junction (JJ), a low power dissipation element in 1960s, there has been a vast amount of design and research development on superconducting electronics (SCE) and circuits. Today, Northrop Grumman Microelectronics Center are taking a step to pave the way to next generation of computing by developing flux memory in superconducting electronics. In particular, we developed a circuit technology called Flux Memory. Flux memory can both serve as memory storage and flux bias to another functional superconducting component with zero power dissipation. We believe this type of local, persistent circulating current technology will enhance performance of other quantum sensors due to its noise-free nature and improve deployability of novel superconducting sensors. Here, we showcase a device design with unique versatility. The flux memory device performs a generic conversion of a digital signal to analogue with only two JJs. To validate the device physics, we use a tunable resonator [1-2] to demonstrate its enormous potential.

Publication: [1] Grover et al., (2020) PRX Quantum, 1, 020314.
[2] AJ Przybysz, DG Ferguson, MS Khalil, Current device readout system, US Patent 10,884,033

Presenters

  • Tony X Zhou

    • Northrop Grumman Mission System

Authors

  • Tony X Zhou

    • Northrop Grumman Mission System
  • Brian Sears

    • Northrop Grumman Mission System
  • Anthony Joseph Przybysz

    • Northrop Grumman Mission Systems
  • David G Ferguson

    • Northrop Grumman Mission Systems
  • Jeremy B Clark

    • University of Maryland, College Park