Charge pumping in Si/SiGe devices to realize the Ampere

Single electron devices can be operated as a source of electrical current, I=ef, where e is the elementary charge and f is the operating frequency. Several experiments have shown that this current can be produced at metrological uncertainty auguring use as a realization of the Ampere. Pumping has been demonstrated in several different material systems, such as GaAs, Si-MOS, and superconducting devices. Advances in Si/SiGe heterostructures and devices for quantum information have enabled charge pumping in this system with anticipated advantages in yield, uniformity, operating temperature and low-field operation. Here, we demonstrate charge pumping in Si/SiGe and our work toward purpose-optimized devices. We acknowledge device support from Intel Corp.