Double quantum dots with quenched charging energy in semiconductor PbTe nanowires

PbTe is a IV-VI narrow-bandgap semiconductor with potential utility for novel topological or spin qubits. One of PbTe's most notable characteristics is its static dielectric constant, which exceeds 1000 at cryogenic temperatures and thus results in quenched charging energy in hosted quantum dots. Here we present our results from transport measurements of electrostatically defined double quantum dots in PbTe nanowire devices. We find charge stability diagrams distinguished by the spin degeneracy of all transport resonances at zero magnetic field. We present the fourfold splitting of high-bias triangles in an applied magnetic field to illustrate the lifting of spin degeneracy via the Zeeman effect. We further identify patterns of transport resonances within these high-bias triangles and discuss their possible physical origins. Finally, we examine the implications of our results and discuss our ongoing work towards the development of PbTe spin qubits.