Epitaxial Growth Mechanisms: Focus on III-V/Si Heteroepitaxy
ORAL
Abstract
The heterogeneous epitaxial integration of group III-V semiconductors with group IV materials holds signifi-cant promise for advancing integrated photonics, solar energy conversion, and quantum technologies. As early as the 1980s, groundbreaking research by H. Kroemer [1] highlighted the key challenges such as lattice mismatch, dislocation formation, and thermal expansion differences that arise during III-V/Si epitaxial growth. These chal-lenges remain central to modern efforts in monolithic co-integration of these material systems.
However, recent experiments challenged these long-established interpretations [2]. Here, we combine advanced epitaxy, in situ microscopy, and Density Functional Theory (DFT) to study how surfaces/interfaces influence Volmer-Weber growth of III-V monodomain islands on Si. We predict and observe in situ their equilibrium shapes and analyze their impact on antiphase boundary (APB) formation and propagation [2–8].
[1] H. Kroemer, J. Cryst. Growth, 1987, 81, 193
[2] I. Lucci et al., Phys. Rev. Mater., 2018, 2, 060401(R).
[3] D. Gupta et al., Appl. Surf. Sci., 2024, 678, 161076.
[4] S. Pallikkara Chandrasekharan et al., Phys. Rev. B, 2023, 108, 075305.
[5] O. Romanyuk et al., Phys. Rev. B, 2016, 94, 155309.
[6] S. Pallikkara Chandrasekharan et al., Phys. Rev. B, 2024, 109 (4), 045304.
[7] I. Lucci et al., Adv. Funct. Mater., 2018, 28, 1801585.
[8] C. Cornet et al., Phys. Rev. Mater., 2020, 4, 053401.
However, recent experiments challenged these long-established interpretations [2]. Here, we combine advanced epitaxy, in situ microscopy, and Density Functional Theory (DFT) to study how surfaces/interfaces influence Volmer-Weber growth of III-V monodomain islands on Si. We predict and observe in situ their equilibrium shapes and analyze their impact on antiphase boundary (APB) formation and propagation [2–8].
[1] H. Kroemer, J. Cryst. Growth, 1987, 81, 193
[2] I. Lucci et al., Phys. Rev. Mater., 2018, 2, 060401(R).
[3] D. Gupta et al., Appl. Surf. Sci., 2024, 678, 161076.
[4] S. Pallikkara Chandrasekharan et al., Phys. Rev. B, 2023, 108, 075305.
[5] O. Romanyuk et al., Phys. Rev. B, 2016, 94, 155309.
[6] S. Pallikkara Chandrasekharan et al., Phys. Rev. B, 2024, 109 (4), 045304.
[7] I. Lucci et al., Adv. Funct. Mater., 2018, 28, 1801585.
[8] C. Cornet et al., Phys. Rev. Mater., 2020, 4, 053401.
*This research was supported by the French National Research NUAGES (Grant no. ANR-21-CE24-0006) and PIANIST projects (Grant no. ANR-21-CE09-0020). The work was granted access to the HPC resources of TGCC/CINES under the allocation A0120911434, A0140911434, A0160911434 and A0180911434 made by GENCI.
–
Publication: I. Lucci et al., Phys. Rev. Mater., 2018, 2, 060401(R).
D. Gupta et al., Appl. Surf. Sci., 2024, 678, 161076.
S. Pallikkara Chandrasekharan et al., Phys. Rev. B, 2023, 108, 075305.
S. Pallikkara Chandrasekharan et al., Phys. Rev. B, 2024, 109 (4), 045304.
https://arxiv.org/abs/2506.08766
https://arxiv.org/abs/2506.03769
https://doi.org/10.2139/ssrn.5480430
Presenters
-
Laurent PEDESSEAU
- INSA Rennes