Terahertz electrodynamics in a zero-field Wigner crystal

ORAL

Abstract

In clean two-dimensional (2D) systems, electrons are expected to self-organize into a regular lattice, a Wigner crystal, when their mutual Coulomb repulsion overwhelms kinetic energy. Understanding the Wigner crystal at zero magnetic field is a long-sought goal in physics, thanks to its fundamental simplicity and possible connection to the density-driven metal-insulator transition. To date, evidence for such a crystal has been reported across various platforms. However, the AC conductivity of a zero-field Wigner crystal, a key observable characterizing its electrodynamics, has never been measured. Here, we develop an ultrasensitive on-chip terahertz (THz) spectroscopy technique to probe the AC conductivity in electrostatically gated monolayer MoSe2 encapsulated in hexagonal boron nitride. We observe a sub-THz resonance corresponding to the pinning mode of a zero-field Wigner crystal, whose frequency is orders of magnitude higher than those under high magnetic fields. Using the pinning mode as an indicator, we reveal that moderate disorder notably stabilizes the Wigner crystal. With increasing density towards melting, we find that the pinning mode of the Wigner crystal coexists with a growing Drude component characteristic of an electron liquid, and the competition between these two components in the conductivity spectra leads to the insulator-metal transition of the 2D electron system. Our findings not only elucidate the low-energy electrodynamics of a zero-field Wigner crystal, but also establish on-chip THz spectroscopy as a powerful probe for correlated quantum phases in two-dimensional materials.

*The measurements were supported by the NSF award no. 2311205. The device fabrication was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division under contract no. DE-AC02-05-CH11231 (van der Waals heterostructures program, KCWF16).

Publication: arXiv:2509.10624

Presenters

  • Sudi Chen

    • University of California, Berkeley

Authors

  • Sudi Chen

    • University of California, Berkeley
  • Ruishi Qi

    • University of California, Berkeley
  • Ha-Leem Kim

    • University of California, Berkeley
  • Qixin Feng

    • University of California, Berkeley
  • Ruichen Xia

    • University of California, Berkeley
  • Dishan Abeysinghe

    • University of California, Berkeley
  • Jingxu Xie

    • University of California, Berkeley
    • Lawrence Berkeley National Laboratory
  • Takashi Taniguchi

    • National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • International Center for Materials Nanoarchitectonics, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
    • Research Center for Functional Materials, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
  • Kenji Watanabe

    • National Institute for Materials Science
    • Research Center for Functional Materials, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
  • Dunghai Lee

    • University of California, Berkeley
  • feng wang

    • University of California, Berkeley