Magnetoresistive memory induced by a hidden order

Oral-In-person

Abstract



Magnetoresistive memory (MRM) is the dependence of a material’s electrical resistivity on its magnetic field history. Previously, it has been reported in only two classes of strongly correlated electron systems: perovskite manganites and pyrochlore iridates. In both cases, MRM emerges below the magnetic transition temperature, indicating a magnetic mechanism, namely metastable magnetic states in manganites [1], and conducting magnetic domain walls in iridates [2]. Here, we report an MRM of extraordinary magnitude in a weakly correlated semiconductor. Remarkably, the effect onsets at twice the transition temperature, excluding a purely magnetic mechanism. The temperature, field, and time dependence of resistivity suggest that a hidden order underlies the MRM.

References:

[1] H. Kuwahara, et al., A First-Order Phase Transition Induced by a Magnetic Field. Science 270, 961-963 (1995).

[2] E. Y. Ma, et al., Mobile metallic domain walls in an all-in-all-out magnetic insulator. Science 350, 538-541(2015).

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Presenters

  • Sudhaman Balguri

    • Boston College

Authors

  • Sudhaman Balguri

    • Boston College

  • Mira Belle Mahendru

  • Rourav Basak

    • University of California, San Diego

  • David Graf

    • Florida State University

  • Andreas Rydh

  • Christopher Homes

    • Brookhaven National Laboratory (BNL)

  • Ying Ran

    • Boston College

  • Alex Frano

    • University of California, San Diego

  • Fazel Tafti

    • Boston College