Exciton dynamics in an atomically thin semiconductor controlled by remote ferroelectric domains

Ferroelectric domains originating from twisted hexagonal boron nitride (t-hBN) offer a new platform for modulating adjacent functional layers. Here, we investigate how the ferroelectric domains in t-hBN influence exciton diffusion and localization in an adjacent atomically thin MoSe₂ layer. The ferroelectric potential imposed by the t-hBN substrate induces two distinct excitonic resonances in MoSe₂, one-dimensional excitons localized at domain walls and two-dimensional-like excitons trapped within domains. Time-resolved transient reflection microscopy reveals that these excitons exhibit distinct dynamics behaviors. Our findings establish remote moiré potential engineering as a viable route for tailoring exciton dynamics and transport in two-dimensional optoelectronic systems.