Improving Performance of Tantalum Resonators through Deposition, Part I
ORAL
Abstract
The cubic phase of tantalum is a very promising material for superconducting transmon qubits, due to its self-limiting surface oxide, low bulk losses, and low kinetic inductance. However, sputtering high-quality tantalum films on silicon often requires using either a seeding layer or high substrate temperatures, both of which introduce possible sources of loss. We present a novel method of growing state-of-the-art tantalum films on silicon with magnetron sputtering using a significantly lower substrate temperature than found in literature. In this first part of a two-part talk, we will present on characterization of these films with a variety of techniques, including AFM, SEM, and SIMS. We find significant changes in the morphology and structure of our films, as compared to ones deposited with more conventional techniques.
*This prototype (or technology) was primarily supported by the Microelectronics Commons Program, a DoW initiative, under award number N00164-23-9-G061. Funding (or Partial funding) for shared facilities used in this prototype was provided by the Microelectronics Commons Program, a DoW initiative, under award number N00164-23-9-G061. This work was performed in part at the Cornell NanoScale Facility, a member of the National Nanotechnology Coordinated Infrastructure (NNCI), which is supported by the National Science Foundation (Grant NNCI-2025233). This work made use of the Cornell Center for Materials Research shared instrumentation facility.
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Presenters
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Lingda Kong
- Cornell University