Single electron quantum dot in two-dimensional transition metal dichalcogenides

Two-dimensional transition metal dichalcogenides (TMDCs) offer a compelling platform for spin–valley quantum technologies, but realizing quantum dots (QDs) with sufficiently large orbital level spacing remains a key materials–device challenge. Conventional gate designs used in TMDC QDs struggle to confine carriers tightly enough —an issue amplified in systems with large effective masses such as TMDCs and silicon. In this work, we introduce a multilayer electrostatic architecture that overcomes these constraints and enables the formation of gate-defined TMDC QDs with substantially enhanced energy level separation. Using realistic device modeling, we map how dot size, gate geometry, and dielectric thickness jointly determine the achievable confinement energy. All parameters employed are within current experimental capabilities, offering clear guidance for near-term implementation. This architecture provides a practical route toward achieving spin–valley-resolved quantum states in TMDC QDs and establishes a scalable framework for advancing 2D-material-based quantum devices.