Hybrid quantum dot devices in magic-angle twisted bilayer graphene

ORAL

Abstract

We introduce magic-angle twisted bilayer graphene (MATBG) as a novel material platform hosting semiconductor-superconductor hybrid quantum dot devices.

We demonstrate carrier confinement through Coulomb blockade in combination with superconductivity and study transport in two distinct regimes: a superconducting island and a quantum dot Josephson junction (S-QD-S).

In the superconducting island regime, we observe the parity effect with a complete 2e to e crossover of the carrier charge as a function of magnetic field. In the S-QD-S regime, we observe an even-odd modulation of the Andreev bound state spectrum, compatible with the formation of the Yu-Shiba-Rusinov states.

Our work exploits the tunability of MATBG quantum devices [1,2,3] to realize quantum dot hybrid systems built on the interface between different collective electronic phases [4,5] in this material.

[1] de Vries, F.K., et al. Gate-defined Josephson junctions in magic-angle twisted bilayer graphene. Nat. Nanotechnol. 16, 760–763 (2021).

[2] Rodan-Legrain, et al. Highly tunable junctions and non-local Josephson effect in magic-angle graphene tunnelling devices. Nat. Nanotechnol. 16, 769–775 (2021).

[3] Rothstein, A., et al. Gate-defined flat-band charge carrier confinement in twisted bilayer graphene. Nano Letters 25 (16), 6429-6437 (2025).

[4] Cao, Y., et al. Unconventional superconductivity in magic-angle graphene superlattices. Nature 556, 43–50 (2018).

[5] Lu, X., Superconductors, orbital magnets and correlated states in magic-angle bilayer graphene. Nature 574, 653–657 (2019).

Presenters

  • Alexandra Mestre-Torà

    • ETH Zurich

Authors

  • Alexandra Mestre-Torà

    • ETH Zurich
  • Marta Perego

    • ETH Zurich
  • Clara Galante

    • ETH Zurich
  • Kenji Watanabe

    • National Institute for Materials Science
    • Research Center for Functional Materials, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
  • Takashi Taniguchi

    • National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • International Center for Materials Nanoarchitectonics, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
    • Research Center for Functional Materials, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
  • Thomas Ihn

    • ETH Zurich
  • Klaus Ensslin

    • ETH Zurich
  • Artem O. Denisov

    • ETH Zurich