Mapping the genome of coherent quantum defects for Quantum Information Science
Invited-In-person · Invited · Withdrawn
Abstract
Abstract:
Quantum emitters are a foundational component of quantum information science (QIS) technologies, serving critical roles in quantum networks, quantum sensing, and photon-based quantum computing. A central challenge across all quantum emitter platforms is the precise, atomistic control of defect creation, ensuring emitters meet these stringent requirements and enabling the production of identical photons capable of entanglement.
To address the challenge, we explore two-dimensional (2D) semiconducting host materials—specifically, monolayer WS2 and MoS2—which allow atomically precise defect engineering. These materials also provide direct access to defect structures and their electronic and optical properties with atomic resolution, achieved using state-of-the-art photo scanning tunneling microscopy (STM) and spectroscopy techniques. We have developed a variety of methods to create sulfur vacancies. In the course of exploring these vacancy-creation pathways, we serendipitously discovered a method to engineer atomically defined one-dimensional defect lines, which host a correlated electron system known as a Tomonaga–Luttinger liquid.
To determine optimal substitutional defects to incorporate into these vacancies, we employed theoretical high-throughput modeling to narrow down potential candidate elements. Guided by these theoretical predictions, we experimentally studied carbon (C) and cobalt (Co) substitutions, and are currently investigating yttrium (Y), silicon (Si), and titanium (Ti). Additionally, we work on creating ensembles of identical Co defects in WS2 to measure critical QIS-relevant properties, such as optical coherence times.
Finally, we will present a novel experimental technique—gate-assisted scanning tunneling luminescence—that enables electrically driven exciton creation with atomic-scale precision. This breakthrough allows us to excite individual defects and measure their optical responses directly and precisely at the atomic scale. This capability provides an unprecedented correlation among structural, electronic, and optical properties of defects in 2D materials, but also significantly accelerates our progress in atomically precise color-center engineering for next-generation quantum emitters.
Quantum emitters are a foundational component of quantum information science (QIS) technologies, serving critical roles in quantum networks, quantum sensing, and photon-based quantum computing. A central challenge across all quantum emitter platforms is the precise, atomistic control of defect creation, ensuring emitters meet these stringent requirements and enabling the production of identical photons capable of entanglement.
To address the challenge, we explore two-dimensional (2D) semiconducting host materials—specifically, monolayer WS2 and MoS2—which allow atomically precise defect engineering. These materials also provide direct access to defect structures and their electronic and optical properties with atomic resolution, achieved using state-of-the-art photo scanning tunneling microscopy (STM) and spectroscopy techniques. We have developed a variety of methods to create sulfur vacancies. In the course of exploring these vacancy-creation pathways, we serendipitously discovered a method to engineer atomically defined one-dimensional defect lines, which host a correlated electron system known as a Tomonaga–Luttinger liquid.
To determine optimal substitutional defects to incorporate into these vacancies, we employed theoretical high-throughput modeling to narrow down potential candidate elements. Guided by these theoretical predictions, we experimentally studied carbon (C) and cobalt (Co) substitutions, and are currently investigating yttrium (Y), silicon (Si), and titanium (Ti). Additionally, we work on creating ensembles of identical Co defects in WS2 to measure critical QIS-relevant properties, such as optical coherence times.
Finally, we will present a novel experimental technique—gate-assisted scanning tunneling luminescence—that enables electrically driven exciton creation with atomic-scale precision. This breakthrough allows us to excite individual defects and measure their optical responses directly and precisely at the atomic scale. This capability provides an unprecedented correlation among structural, electronic, and optical properties of defects in 2D materials, but also significantly accelerates our progress in atomically precise color-center engineering for next-generation quantum emitters.
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Presenters
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Alexander Weber-Bargioni
- Lawrence Berkeley National Laboratory