Kelvin probe microscopy study of moiré-induced electronic modulation in 2d semiconductors

Two-dimensional (2D) materials and their heterostructures have attracted significant interest due to their unique electronic and optical properties. This study investigates heterostructures of graphene, MoSe₂, and MoS₂ with twisted hBN (t-hBN), fabricated using a dry transfer method to form controlled moiré superlattices. Kelvin Probe Force Microscopy (KPFM) is employed to map local contact potential difference and reveal nanoscale electric potential landscapes. The work examines how different 2D-semiconductor overlayers modify the moiré-induced potential caused by the underlying t-hBN layer. By analyzing potential modulation and interlayer electronic coupling, the study highlights material-dependent effects in these heterostructures. Insights from this investigation provide a deeper understanding of electronic interactions in 2D systems. The findings aim to guide the design and optimization of next-generation 2D electronic and optoelectronic devices.