Modeling and Simulation of Plasma Induced Anisotropic Etching in Molybdenum Disulfide Using MATLAB

Plasma etching is a cornerstone of nanoscale fabrication, although Molybdenum disulfide (MoS2) is a fairly explored layered transition metal dichalcogenide when it comes to this, it is still important to use to see if the simulated data is the same as past simulated data, confirming the transition to MATLAB functions properly. This work presents a MATLAB based simulation framework for anisotropic plasma etching of MoS2, incorporating ion flux, incidence angle, and energy distributions derived from experimental sputtering data. The model predicts trench evolution in one, two, and three dimensions and qualitatively reproduces anisotropic etching behavior reported in the literature. Results demonstrate that ion incidence angle and energy significantly influence etch depth and profile, while extended simulation time correlates with increased trench depth. The framework provides a scalable tool for parameter exploration and process optimization, bridging the gap between experimental plasma etching studies and computational modeling of emerging 2D materials. Index Terms Plasma etching, MoS2, MATLAB, simulation, transition metal dichalcogenides.