Photoluminescence Mapping of Ion Implanted SiV- centers Arrays in Diamond

Charged silicon-vacancy (SiV-) centers in diamond are promising candidates for quantum information and sensing due to its bright and stable zero-phonon line (ZPL) in the near infrared. In this work, we investigate the efficacy of focused ion beam implantation of singly (Si+) and both singly and doubly charged silicon ions (Si+ and Si2+) into electronic-grade diamond across varying implantation doses and pattern geometries. Room-temperature photoluminescence mapping of the ZPL was performed on two-dimensional arrays containing single color centers or ensembles of approximately 3,000 SiV- centers. In addition, we compared different controlled spatial separations ranging from 20 nm to 400 nm for the different doses. Our results reveal an accurate deposition of the defects with the desired characteristics. However, minor deviations were found from the intended implantation patterns, manifested as ''ghosting'' effects attributed to off-target implantation by the 29Si isotope located above the desired 28Si trajectory. This work demonstrates the reliability and spatial precision of focused ion beam implantation for generating SiV- defect centers, which establishes it as a viable technique for scalable fabrication of diamond-based photonic and quantum devices.