Imagining a field–tunable magnetism in Fe- and Mn-doped Monolayer MoS2 in two -dimensional dilute magnetic semiconductor.

Dilute magnetic semiconductors (DMSs) have emerged as promising candidates for low-power electronics, spintronics, quantum technologies, and non-volatile memory devices. These materials are typically non-magnetic semiconductors doped with small concentrations of transition metal atoms to induce magnetic functionality. Traditional three-dimensional DMSs, such as (Ga, Mn)As, laid the groundwork for spin-based devices; their practical applications are limited by low Curie temperatures and restricted tunability. By doping 2D semiconductors with transition metal atoms, these systems provide a unique combination of semiconducting behaviour and controllable magnetism, making them promising for next-generation spintronic and quantum applications. In this study, we investigate Fe, Mn, and Fe–Mn co-doping in MoS₂ and demonstrate robust ferromagnetic behaviour at room temperature, while preserving the intrinsic semiconducting properties of the host material synthesized by chemical vapour deposition. Throughout all the doped samples, it is found that the magnetic response of Fe/Mn co-doped MoS2 exhibits a strong magnetic-dependent behaviour. The magnetic mechanism is discussed with the local magnetic property performed by Magnetic Force Microscopy. These findings reveal the main characteristics of diluted magnetic semiconductors (DMS) in 2D materials: magnetic atoms Fe and Mn generate the changes in the minute magnetic Moments inside a semiconducting MoS₂ monolayer. The Fe/Mn co-doped MoS2 clearly shows the phase change in the study of MFM in the presence of varying magnetic field ranges from 0 G to 6000 G. The VSM SQUID magnetometry confirms the field dependence of MFM phase maps by showing magnetic responses. These findings provide fundamental insight into the origin of magnetism in transition-metal-doped 2D semiconductors and the interplay between magnetic and semiconducting properties at the atomic scale. The demonstrated room-temperature ferromagnetism in Fe/Mn co-doped MoS₂ opens up promising avenues for designing next-generation spintronic devices, magneto-optical sensors, where magnetic control and semiconducting performance can coexist.