Integrating hBN-encapsulated MoS₂ with Surface Acoustic Waves

Surface acoustic waves (SAWs) offer a powerful means to study quantum (low-dimensional) materials. SAWs provide tunable length scales on which to probe carrier dynamics and coupling phenomena beyond that of simple electrical transport. Here, we plan to use interdigitated transducer arrays producing SAWs to measure acoustoelectric effects in MoS₂. Using a similar fabrication approach to Nichols (2024), we are developing devices with MoS₂ encapsulated in hexagonal boron nitride with black LiNbO₃ as a substrate and controlled via a graphene top gate. Compared to prior work where an encapsulated graphene channel interacted with the SAW,  MoS₂ allows for distinctive measurements due to its appreciable bandgap. Through this, we aim to advance our understanding of acoustic-electronic coupling in low-dimensional semiconductors.