Automated Generation of Charge Stability Diagrams for Semiconductor Quantum-Dot Qubit Devices Using Parameterized Hubbard Models

Rapid generation of charge stability diagrams for semiconductor qubit devices is useful as a first-pass in device design in order to gauge viability. The method we have developed for this allows us to input a material heterostructure stack with its accompanying gate geometry and, using the UCLA Modeling and Simulation for Quantum Exploration (MaSQE) tools, parametrize a Hubbard model using the Quantum Toolbox in Python (QuTiP). More specifically, the MaSQE codes can be used to estimate charging energies, lever arms, and interdot Coulomb repulsions that can be mapped to the parameters of the model. We conclude by benchmarking our simulated results against experimental data from a Si/SiGe device.