Quantum sensing using new spin systems in hBN
ORAL · Invited
Abstract
In this work i will descirbe our recent efforts to engineer and characterise spin defects in hBN.
Engineering robust, solid‐state quantum systems is amongst the most pressing challenges to realise scalable quantum photonic circuitry. In recent years, quantum emitters in hexagonal
boron nitride (hBN) have emerged as fascinating candidates for realisation of room temperature quantum technologies with hBN. Amongst various system - spin defects such as negatively charged boron vacancy (VB-) has been mostly studied. it has a spin triplet group state but is very dim and is associated with a broad emission. More recently, a new class of spin defects has emerged, with narrowband emission and a clear S=1/2 signatures. I will discuss the potential origin of these emitters, and show preliminary results of their utilisation for sensing.
Engineering robust, solid‐state quantum systems is amongst the most pressing challenges to realise scalable quantum photonic circuitry. In recent years, quantum emitters in hexagonal
boron nitride (hBN) have emerged as fascinating candidates for realisation of room temperature quantum technologies with hBN. Amongst various system - spin defects such as negatively charged boron vacancy (VB-) has been mostly studied. it has a spin triplet group state but is very dim and is associated with a broad emission. More recently, a new class of spin defects has emerged, with narrowband emission and a clear S=1/2 signatures. I will discuss the potential origin of these emitters, and show preliminary results of their utilisation for sensing.
*Australian Research Council (CE200100010, FT220100053)
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Presenters
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Nicholas Sloane
- University of Technology Sydney