Efficient doping of graphene in field-effect transistors with strontium titanate

We utilize the sizeable dielectric constant of perovskite material strontium titanate (STO) in field-effect transistors to electrostatically dope graphene to high charge densities. Using thin film transfer techniques, we assemble heterostructures from thin sheets of STO and 2D materials. We demonstrate superior efficiency of STO as gate dielectric in direct contact with graphene compared to hexagonal boron nitride while maintaining high quantum mobility of graphene.