Efficient doping of graphene in field-effect transistors with strontium titanate
ORAL
Abstract
We utilize the sizeable dielectric constant of perovskite material strontium titanate (STO) in field-effect transistors to electrostatically dope graphene to high charge densities. Using thin film transfer techniques, we assemble heterostructures from thin sheets of STO and 2D materials. We demonstrate superior efficiency of STO as gate dielectric in direct contact with graphene compared to hexagonal boron nitride while maintaining high quantum mobility of graphene.
*This work was supported by the Gordon and Betty Moore Foundation, grant doi.org/10.37807/gbmf11560, and the Air Force Office of Scientific Research under DEPSCoR award no. FA9550-25-1-0321.
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Presenters
Dmitry L Shcherbakov
Washington University in St. Louis
Authors
Dmitry L Shcherbakov
Washington University in St. Louis
Sanggeun Bae
Washington University in St. Louis
Sangmoon Han
Washington University in St. Louis
Zhihao Hu
Washington University in St. Louis
Kenji Watanabe
National Institute for Materials Science
Research Center for Functional Materials, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
Takashi Taniguchi
National Institute for Materials Science
Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
International Center for Materials Nanoarchitectonics, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
Research Center for Functional Materials, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
