Structural Optimization and Growth of Oriented AIN and a-C:H Nanofilms Using the Custom Deposition System "Sputnik".

Using the custom “Sputnik” deposition chamber, we fabricated oriented AlN and hydrogenated amorphous carbon (a-C:H) nanofilms. In the previous projects sputtering AlN on Si(100) at 300 W and 200 °C produced ~200 nm-thick films (measured 190±10 nm ) with pure (002) crystal orientation (high c-axis piezoactivity); a-C:H was deposited under -150 V bias (∼0.8 Torr glow discharge), yielding nearly 100% optical transmission. These carbon films reached ~260 nm thickness (at 62% mesh transparency, -50 V bias) with thickness uniformity within ±0.1 nm; oil-free spiral+turbo pumps and six gauges enable precise vacuum (from ≈10^–3 to 10^–1 Torr ), while symmetric dual magnetrons ensure uniform discharges (with in-chamber substrate heating).

XRD analysis showed that increasing discharge power enhances film thickness and crystallite size, when higher substrate temperature reduces stress and defect density. We got optimal conditions which are [300 W, 200 °C] and reached ~63 nm crystallites with high orientation, defining parameters for stable AlN layers in acoustic resonators.

Currently we are still working on this project and we are aiming to get RMS roughness < 2 nm by plasma parameter optimization and introducing MOF-based template layers (e.g., ZIF-8, UiO-66) to minimize nucleation defects and improve film uniformity. 

We will present AFM, XRD, ellipsometry data, growth trends, and proposed MOF-templated deposition results.