Is Si/SiGe suitable for conveyor-mode spin-qubit shuttling?

Conveyor-mode shuttling transports a spin qubit adiabatically while it remains confined in a propagating sinusoidal potential defined by gate electrodes in a quantum channel [1]. A central advantage of this approach is its purely electrical operation using only a few easily tunable input signals [2], combined with compatibility with industrial gate-fabrication processes [3]. Crucially, the electron spin encoding the qubit can be preserved during transport in Si/SiGe [4]. Mobile spin qubits enable new schemes for qubit manipulation and readout, and they offer a pathway to reducing spin-qubit cross-talk. Several concepts have emerged for integrating mobile qubits into sparse quantum-computing architectures [5] for co-integrated with cryogenic electronics [6].

I discuss experimental and theoretical insights into how inhomogeneities in the Si/SiGe heterostructure influence conveyor-mode spin-qubit shuttling [7]. A key feature of the conveyor-mode approach is that the shuttling process itself can be used to map local material properties such as valley splitting and electrostatic disorder along the channel [8]. These spatial maps provide valuable feedback for mitigation strategies [9] and for benchmarking material-improvement efforts, including strain engineering and Ge-composition modulation. To fully harness the capabilities of spin-qubit shuttling, linear shuttle lanes must be extended into a two-dimensional grid with controllable routing. I show how T-junctions between shuttle lanes can be realized without introducing additional control lines. Within such a T-junction, electrons can be reordered with high fidelity, enabling a novel spin-SWAP operation that does not rely on exchange interaction.

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