Probing dopant-based quantum simulators faster than the steady state limit

Dopant arrays in Si are being used as quantum simulators of interacting electron systems. Transport and reflectometry probe on time scales much slower than the array dynamics, providing steady-state information but little information about quantum states of the array. Faster probing, on the time scale of hopping in the array or interaction between array spins, is needed. We have carried out dynamical modelling of quantum simulators made with a small dopant array, a source and drain to move charge in or out of the array and quantum emitters located to probe or modify the dynamics. We show that the quantum emitters can stimulate charge transfer into or out of the array, can transfer energy into the array to probe excited states, can modify the potential landscape locally to control quantum states for a simulation. We show how monitoring the quantum emitters allows one to probe and control the array. our modelling defines properties of the emitters needed for fast probing. B-P complexes with shallow acceptor and donor levels could serve as precisely placed quantum emitters operating at near optical frequencies. We analyze B-P complexes using tight-binding theory and density functional theory to identify complexes useful as quantum emitters for fast probing and control.