Properties of InSe/CuInP<sub>2</sub>S<sub>6</sub> heterostructures: Effects of ferroelectricity
ORAL
Abstract
After the discovery of ferroelectricity in van der Waals materials such as CuInP2S6 (CIPS) [1] and In2Se3 [2], ferroelectric field effect transistors based on van der Waals 2D ferroelectrics and non-ferroelectric channel materials were widely studied. The role that the ferroelectricity played in those devices was thought to be solely electrostatic doping. In
heterostructures like BaTiO3/SrRuO3 [3-4] and AlBN/AlN [5], The effect of ferroelectrics on adjacent non-ferroelectric layer beyond electrostatic doping were found. However, the same effect has not been studied in van der Waals ferroelectric semiconductors. Here we report the preparation of the CIPS/InSe/Graphene heterostructures and exploration of the interplay between the ferroelectric properties of CIPS and the transport properties of non-ferroelectric InSe. We will also discuss the prospects of device applications based on this effect.
[1] F. Liu, et al. Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes. Nat Commun 7, 12357 (2016).
[2] W. Ding, et al. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials. Nat Commun 8, 14956 (2017).
[3] G. Gerra, et al. Ionic Polarizability of Conductive Metal Oxides and Critical Thickness for Ferroelectricity in BaTiO3. Phys. Rev. Lett. 96, 107603 (2006).
[4] Xiaokang Yao, et al. Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO3/BiFeO3 Multilayers. ACS Appl. Mater. Interfaces 14, 6194−6202 (2022).
[5] Chloe H. Skidmore, et al. Proximity ferroelectricity in wurtzite heterostructures. Nature 637, 574–579 (2025).
heterostructures like BaTiO3/SrRuO3 [3-4] and AlBN/AlN [5], The effect of ferroelectrics on adjacent non-ferroelectric layer beyond electrostatic doping were found. However, the same effect has not been studied in van der Waals ferroelectric semiconductors. Here we report the preparation of the CIPS/InSe/Graphene heterostructures and exploration of the interplay between the ferroelectric properties of CIPS and the transport properties of non-ferroelectric InSe. We will also discuss the prospects of device applications based on this effect.
[1] F. Liu, et al. Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes. Nat Commun 7, 12357 (2016).
[2] W. Ding, et al. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials. Nat Commun 8, 14956 (2017).
[3] G. Gerra, et al. Ionic Polarizability of Conductive Metal Oxides and Critical Thickness for Ferroelectricity in BaTiO3. Phys. Rev. Lett. 96, 107603 (2006).
[4] Xiaokang Yao, et al. Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO3/BiFeO3 Multilayers. ACS Appl. Mater. Interfaces 14, 6194−6202 (2022).
[5] Chloe H. Skidmore, et al. Proximity ferroelectricity in wurtzite heterostructures. Nature 637, 574–579 (2025).
*This work is supported by the US Department of Energy, Office of Science, Office of Basic Energy Sciences Energy Frontier Research Centers program under Award Number DE-SC0021118.
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Presenters
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Jinyuan Yao
- Pennsylvania State University