Temperature-dependent Raman spectroscopy of Bi doped α-In₂Se₃

Two-dimensional (2D) ferroelectric (FE) materials are crucial to nanoscale and low-power devices like memristors, FE field-effect transistors, and FE tunnel junctions. α-In₂Se₃ is a promising material due to its high carrier mobility and robust room-temperature ferroelectricity, with the transition to paraelectricity at 473 K (200 C). Our study presents a temperature-dependent Raman analysis of α-(In_1-xBi_x)₂Se₆, with x ranging from 0.01 to 0.5, revealing the impact of both low-level doping and high-level bismuth substitution on the Raman spectrum and the FE transition. We also include basic characterization results for carrier mobility at various doping levels.