On Polarization Switching in Ferroelectric Semiconductor α-In₂Se₃

 The 2D ferroelectric semiconductor α-In₂Se₃ opens new possibilities for the development of novel, ultrathin nanoelectronics combining high density memory and low-power logic capabilities within one material system. Its strong out-of-plane polarization down to atomic-scale thicknesses, moderate bandgap (~1.35 eV), and low electron mass make it an exceptional candidate for various post-silicon optoelectronic and electronic devices. Additionally, an experimentally observed in-plane polarization provides novel, self-powered device applications; despite being disallowed by crystal symmetry. In this study, transport and scanning probe microscopy are used to probe ferroelectric domains and polarization switching, elucidating the role of applied in-plane and out-of-plane electric fields on the ferroelectric polarization in thin flakes of α-In₂Se₃.