Study of Bipolar Resistive Switching in Transition Metal Oxide based rigid and flexible ReRAM Devices.
ORAL
Abstract
Transition metal oxide-based resistive random-access memory (ReRAM) devices are promising candidates for next-generation non-volatile and neuromorphic computing applications. In this work we present a comprehensive study of bipolar resistive switching in NiO, ZnFe₂O₄ (ZFO), Mn₃O₄, and their heterostructures fabricated in configurations such as Al/NiO/ZFO/ITO, Ti/NiO/AZO/PET, and Al/Mn₃O₄/FTO. The devices exhibit forming-free operation, stable high and low resistance states, and multilevel switching with resistance ratios up to 10², retention exceeding 10⁴ seconds, and endurance beyond 1000 cycles. The flexible Ti/NiO/AZO/PET device maintains reliable switching under bending, confirming its suitability for wearable memory applications. Electrical analysis reveals ohmic, space charge limited, and Schottky conduction mechanisms depending on the resistance state and material composition. Oxygen vacancy-based filament formation and rupture are identified as the key processes governing switching. The comparative investigation of materials and device architectures provides insight into how oxide composition and interface design influence switching stability and scalability.
*Adiba acknowledges financial support from the Council of Scientific and Industrial Research (CSIR), Government of India, through the Senior Research Fellowship (SRF). The authors acknowledge the use of facilities at AMU, IIT Delhi and IIT Jammu.
Publication: 1. https://doi.org/10.1016/j.xpro.2025.103732.
2. https://doi.org/10.1038/s41598-025-88549-5.
3. https://doi.org/10.1016/j.physb.2023.414742.
4. https://doi.org/10.1016/j.mtcomm.2023.105484.
Presenters
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Adiba Adiba
- Aligarh Muslim University