Design and exploration of 2D materials based devices.

The continued scaling of silicon-based electronic devices is increasingly hindered by fundamental electrostatic and quantum-mechanical limitations, including short-channel effects, mobility degradation and enhanced carrier tunneling at reduced gate lengths. These challenges require alternative materials which are capable of sustaining high carrier mobility, strong gate controllability and reduced power dissipation at nanometer dimensions. Two-dimensional (2D) materials, atomically thin crystals with van der Waals interlayer coupling offer intrinsically superior electrostatic integrity due to their ultimate thickness limit and absence of dangling bonds at the surface. Their reduced dielectric screening, tunable band structures, and high in-plane carrier mobility enable efficient channel modulation and suppressed short-channel effects in field-effect transistor architectures. This talk highlights how 2D materials enable control over carrier injection, recombination dynamics, and switching kinetics, establishing them as a scalable and multifunctional platform for next generation nano-electronic technologies beyond conventional bulk semiconductors.